The GaN power amplifier covers 0.9-5.4 GHz with 59-70% efficiency, strong output power, and reliable performance for multiple wireless systems.
Authors
Kumar Rajesh, Indian Institute of Information Technology, Department of Electronics & Communication Engineering, Karnataka, Dharwad, India
Tosif Abdul Gaffar Babu, Piet, Department of Electronics & Communication of Engineering, Gujarat, Vadodara, India
Kumar Sanjeev, Associate Professor, Jindal Global Business School, O.P. Jindal Global University, Sonipat, Haryana, India
Hanna Olaiuk, Jindal Global Business School, O.P. Jindal Global University, Sonipat, Haryana, India
Singh Sudhakar, School of Bioengineering and Biosensing, Lovely Professional University, Biomedical Engg Department, Punjab, India
Summary
This work suggests a fully integrated power amplifier (PA) in GaN technology that supports multi-mode operation. The input matching network has assembled as a Ttype, which is working to construct the wideband MN. The designed MN realizes the impedance match. Decreases in the target impedance zone in the intended frequency band are achieved using load-pull and source-pull technologies. The 10 W GaN HEMT has been used to design, fabricate, and measure broadband, highly efficient PAs. A bandwidth of 70.8% is attained using PA between 0.9 and 5.4 GHz. With an output power of 59% to 70%, a drain efficiency and PAE of more than 33 dBm, and a gain between 10 and 12.1 dB.
Published in: 4th Wireless, Antenna and Microwave Symposium, WAMS 2025
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